Factors of 10 are always nice

Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices:

In graphene monolayers, the 1/f noise is found to follow Hooge’s empirical relation with a noise parameter comparable to that of bulk semiconductors. However, this 1/f noise is strongly suppressed in bilayer graphene devices and exhibits an unusual dependence on the carrier density, different from most other materials. The unexpected noise behavior in graphene bilayers is associated with its unique band structure that varies with the charge distribution among the two layers, resulting in an effective screening of potential fluctuations due to external impurity charges.

And in this case, a look at their graph suggests noise reductions on the order of 1000 are not implausible. Of course, let’s see them actually make something with it…


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